Switching Performance Comparison of the SiC JFET and SiC JFET/Si MOSFET Cascode Configuration
نویسندگان
چکیده
منابع مشابه
Cascode Configuration Eases Challenges of Applying SiC JFETs
After explaining the basic operation of a SiC JFET plus silicon MOSFET cascode circuit, the dynamics of cascode switching will be discussed and the use of a QRR tester to evaluate the reverse-recovery characteristics of a cascode circuit will be explained. A comparison of the cascode’s reverse recovery with that of a SiC MOSFET reveals that the JFET cascode actually performs better than the SiC...
متن کاملSwitching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters
This paper reports on SiC devices operating in a dc-dc buck converter under extremely high ambient temperatures. To this end, the authors packaged SiC JFET and Schottky diodes in thermally stable packages and built a high-temperature inductor. The converter was tested at ambient temperatures up to 400◦C. Although the conduction loss of the SiC JFET increases slightly with increasing temperature...
متن کاملSystem for Evaluation of a Depletion-mode SiC Power JFET
This paper presents the system for evaluation of a depletion-mode silicon carbide (SiC) power junction field-effect transistor (JFET). The main part of the system is a dc-dc step-down converter which simulates realistic operating conditions of switching devices in a synchronous buck configuration. In order to ensure a proper operation of the synchronous buck converter test board, a precise time...
متن کاملNANOMANUFACTURING OF SiC CIRCUITS — NANOMECHANICAL LOGIC AND NEMS-JFET INTEGRATION
Silicon carbide (SiC) remains the most promising semiconductor for developing harsh environment microsystems, particularly in applications where temperatures exceed 300 °C. While significant progress has been made in the development of more conventional junction field effect transistors (JFET), many challenges remain, particularly in the realization of robust digital logic circuits. The authors...
متن کاملDiode-Free Synchronous Rectification using a SiC Trench JFET
The reverse conduction mode of operation of the SiC trench JFET allows for diode-free synchronous rectification. This paper shows that the reverse conduction mode is an inherent property of the device caused by diffusion of electrons through the source fingers under conditions of moderate gate-drain diode forward bias. Experimental results confirm the expectations for a vertical-channel SiC JFE...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Transactions on Power Electronics
سال: 2014
ISSN: 0885-8993,1941-0107
DOI: 10.1109/tpel.2013.2283144